The first 3D and triple-level cell (TLC) SSDs by Micron

Posted by Oksana Zybinskaya on June 3, 2016
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Micron has announced its first 3D NAND SSDs, triple-level cell (3bits/cell) 1100 and 2200 products.

The 1100 is a 6Gbit/s SATA product coming in 2.5-inch and M.2 SATA formats in 256GB, 512GB, 1024GB and 2048GB (2.5-inch only) capacity points, it uses 32-layer TLC NAND with 384Gb dice.Micron 1100 3D NAND SSD in the M.2 form factor

Micron 1100 3D NAND SSD in the M.2 form factor

1100’s speeds and feeds;

  • To 92,000 random read 4K IOPS
  • To 83,000 random write 4K IOPS
  • 530MB/sec sequential read
  • 500MB/sec sequential write
  • Latency – read/write 85μs/40μs typical FOB
  • Endurance – 120TB written – 256GB, 240TBW – 512GB, 400TBW 1 & 2TB (=224GB/day for 5 years)

For reference, here are the characteristics of Micron’s M600, using 16nm process MLC flash with 128Gb dice:

  • To 100,000 random read 4K IOPS
  • To 88,000 random write 4K IOPS
  • 560MB/sec sequential read
  • 510MB/sec sequential write
  • Endurance – 100TB written – 128GB, 2000TBW – 256GB, 300TBW – 512GB, 400TBW 1TB

Considering the fact that TLC has less endurance than MLC NAND as well as slower performance, 1100 shows a significant result being not that far behind M600.

1100 has an extreme low power mode called DEVSLP, with less than 2 mW needed for 256 and 512 GB products in this mode, whereas 1TB needs 4mW.

Like the M600, the 1100 has dynamic write acceleration. Its uncorrectable bit error rate (UBER) is <1 sector per 1015  bits read. The product features encryption and secure erase capability and a 1.5 million hours MTBF rating.

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Oksana Zybinskaya
Oksana Zybinskaya
Online Marketing Manager at StarWind. In touch with virtualization world, may know stuff you are interested in.