The first 3D and triple-level cell (TLC) SSDs by Micron
Micron has announced its first 3D NAND SSDs, triple-level cell (3bits/cell) 1100 and 2200 products.
The 1100 is a 6Gbit/s SATA product coming in 2.5-inch and M.2 SATA formats in 256GB, 512GB, 1024GB and 2048GB (2.5-inch only) capacity points, it uses 32-layer TLC NAND with 384Gb dice.
Micron 1100 3D NAND SSD in the M.2 form factor
1100’s speeds and feeds;
- To 92,000 random read 4K IOPS
- To 83,000 random write 4K IOPS
- 530MB/sec sequential read
- 500MB/sec sequential write
- Latency – read/write 85μs/40μs typical FOB
- Endurance – 120TB written – 256GB, 240TBW – 512GB, 400TBW 1 & 2TB (=224GB/day for 5 years)
For reference, here are the characteristics of Micron’s M600, using 16nm process MLC flash with 128Gb dice:
- To 100,000 random read 4K IOPS
- To 88,000 random write 4K IOPS
- 560MB/sec sequential read
- 510MB/sec sequential write
- Endurance – 100TB written – 128GB, 2000TBW – 256GB, 300TBW – 512GB, 400TBW 1TB
Considering the fact that TLC has less endurance than MLC NAND as well as slower performance, 1100 shows a significant result being not that far behind M600.
1100 has an extreme low power mode called DEVSLP, with less than 2 mW needed for 256 and 512 GB products in this mode, whereas 1TB needs 4mW.
Like the M600, the 1100 has dynamic write acceleration. Its uncorrectable bit error rate (UBER) is <1 sector per 1015 bits read. The product features encryption and secure erase capability and a 1.5 million hours MTBF rating.
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